C-Band DRO LNB
  • High Electron Mobility Transistor
$219.00
Features
Input Frequency3.4 to 4.2 GHz
Output Frequency950 to 1750 MHz
Noise Temperature17°K to 20°K @ 25°C
Gain65 dB Typical
Gain Flatness±1.5 dB Max
RF Band Pass FilterYes
Output VSWR2.0:1 Typical, 75 ohm
1-dB Compression Point+10 dBm Min
3rd Order Intercept Point+20 dBm Min
LO Frequency5150 MHz
LO Frequency Stability±500 KHz Typical; -40°C to +60°C
Phase Noise-73 dBc/Hz @ 1 KHz
-95 dBc/Hz @ 10 KHz
-110 dBc/Hz @ 100 KHz
DC Feed+16 to 28 VDC
Current210 mA Max
Operating Temperature-40°C to +60°C
Input InterfaceFlange, WR 229G
Output Interface75 Ohm, Type "F" Female Gold Plated
FinishPowder Coat
Physical Size4 x 3.1 x 6.0 inches
P-HEMT TechnologyHigh Electron Mobility Transistor

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