C-Band LNA
  • HEMT Technology: High Electron Mobility Transistor
$399.00
Features
Input Frequency3.625 to 4.2 GHz
Noise Temperature40°K @ 25°C
Gain55 dB Typical, 50 dB Min
Gain Flatness±1.5 dB Max
Input VSWR2.5:1 Typical, 50 ohm
Output VSWR1.5:1 Typical, 50 ohm
1-dB Compression Point+5 dBm Min
3rd Order Intercept Point+16 dBm Min
DC Power+15 to 28 VDC
Current185 mA Max
Operating Temperature-30°C to +60°C
Input InterfaceFlange, WR 229G
Output Interface50 Ohm, Type "N" Female
FinishPowder Coat
Physical Size3.86 x 3.0 x 7.0 inches
HEMT TechnologyHigh Electron Mobility Transistor

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